On the zero temperature critical point in heavy fermions
نویسندگان
چکیده
منابع مشابه
Quantum Critical Point in Heavy Fermions
The concept that heavy fermions are close to a quantum critical point and that this proximity determines their physical behavior has opened new perspectives in the study of these systems. It has provided a new paradigm for understanding and probing the properties of these strongly correlated materials. Scaling ideas were important to establish this approach. We give below a brief and personal a...
متن کاملSpin Dynamics near the Quantum Critical Point of Heavy-Fermions
The dynamical spin susceptibility is studied in the magnetically-disordered phase of heavy-Fermion systems near the antiferromagnetic quantum phase transition. In the framework of the S = 1/2 Kondo lattice model, we introduce a perturbative expansion treating the spin and Kondo-like degrees of freedom on an equal footing. The general expression of the dynamical spin susceptibility that we deriv...
متن کاملCritical phenomena near the antiferromagnetic quantum critical point of Heavy - Fermions
We present a study of the critical phenomena around the quantum critical point in heavy-fermion systems. In the framework of the S = 1/2 Kondo lattice model, we introduce an extended decoupling scheme of the Kondo interaction which allows one to treat the spin fluctuations and the Kondo effect on an equal footing. The calculations, developed in a self-consistent one-loop approximation, lead to ...
متن کاملthe effect of using critical discourse analytical tools on the improvement of the learners level of critical thinking in reading comprehension
?it is of utmost priority for an experienced teacher to train the mind of the students, and enable them to think critically and correctly. the most important question here is that how to develop such a crucial ability? this study examines a new way to the development of critical thinking utilizing critical discourse analytical tools. to attain this goal, two classes of senior english la...
Zeroing in On a Zero-Temperature Coefficient Point
The transconductance characteristics of MOS transistors realized in 0.18 p n CMOS technology have B zerotemperature coefticient (ZTC) bias point. The presence of this point influences performance of both analog and digital circuits. The offset voltage drift in a saurce-coupled differential pair strongly increases, if the transistor drain currents are equal to the bias currents of ZTC point. It ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Zeitschrift für Physik B Condensed Matter
سال: 1996
ISSN: 0722-3277,1431-584X
DOI: 10.1007/s002570050200